any changing of specification will not be informed individual MMBT589 pnp silicon general purpose transistor collector 3 1 base 2 emitter dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 k j c h l a b s g v 3 1 2 d t o p v i e w http://www.secosgmbh.com elektronische bauelemente 1 2 3 fe a tures maximum ra tings* t a =25 unless other w is e noted symbol para mete r v a lue unit s v cbo colle ctor-ba s e v o lt age -50 v v ce o coll ector-emitter v o lt age -30 v v eb o emitter-base v o lt ag e -5 v i c coll ector curr e n t -contin uo us -2 a p d t o t a l device di ssip a tio n 310 mw r ja t hermal resist ance,j uncti on to ambient 403 /w t j , t st g junctio n an d s t orage t e mper ature -55-1 50 marking : 589 electrical char acteristics ta m b = 2 5 unle ss other w ise specifie d paramet e r symbol t est conditions min typ m a x unit co llecto r -b ase b r eakd o w n v o lt ag e v (b r)cb o ic=-100a,i e =0 -50 v co llecto r -emitter b r ea kd o w n v o lt ag e v (b r)ce o ic=-10ma,i b =0 -30 v emitter-b a s e b r eakd o w n v o lt ag e v ( br ) ebo i e =-100a,i c =0 -5 v co llecto r cu t-o ff cu rren t i cb o v cb =-30v ,i e =0 -0.1 a collector-emitter cut-off current i ce s v ces =-30v -0.1 a emitter cut-off current i ebo v eb =-4v ,i c =0 -0.1 a h fe1 v ce =-2v ,i c =-1ma 100 h fe2 v ce =-2v ,i c =-500ma 100 300 h fe3 v ce =-2v ,i c =-1a 80 dc cu rr en t g a in h fe4 v ce =-2v ,i c =-2a 40 v ce (sa t )1 i c = -500ma, i b =-50 ma -0.25 v v ce (sa t )2 i c = -1a, i b =- 100 ma -0.3 v co llecto r -emitter satu r atio n v o lt ag e v ce (sa t )3 i c = -2a, i b =- 200 ma -0.65 v bas e -emitte r satu r atio n v o lt ag e v be( sat) i c = -1a, i b =- 100 ma -1.2 v base-emitter t u rn-on v o lt age v be( on) v ce =-2v , i c =-1a -1.1 v t r a n s ition fre que nc y f t v ce =-5v , i c =-100 ma , f =100mhz 100 mhz co llecto r ou tp u t cap acit a nce cob f=1mhz 15 pf 01 -jun-2002 rev. a page 1 of 3 r o h s c o m p l i a n t p r o d u c t a s u f f i x o f " - c " s p e c i f i e s h a l o g e n & l e a d - f r e e
any changing of specification will not be informed individual MMBT589 pnp silicon general purpose transistor http://www.secosgmbh.com elektronische bauelemente figure 1. dc current gain versus collector current figure 2. dc current gain versus collector current figure 3. aono voltages figure 4. base emitter saturation voltage versus collector current figure 5. collector emitter saturation voltage versus collector current figure 6. collector emitter saturation voltage versus collector current 10 0.001 i c , collector current (amps) 200 150 100 50 i c , collector current (ma) 100 1000 1.0 130 90 70 50 100 1000 1.0 i c , collector current (ma) 1.0 0.4 0.3 0.2 0.1 0 i c , collector current (amps) 0.01 0.001 1.0 0.95 0.6 0.55 0.5 1.0 0.01 i b , base current (ma) 1.0 0.6 0.4 0.2 0 i c , collector current (amps) 0.001 1.8 1.0 0.8 0.6 0.2 0 0.1 0.1 h fe , dc current gain v, voltage (volts) v be(sat) , base emitter saturation 0 0.01 0.1 1.0 10 110 150 170 10 0.1 1.0 10 , collector-emitter voltage (volts) v ce 10 1000 100 0.8 0.01 10 1.0 0.4 v ce(sat) , collector emitter saturation v ce = -2.0 v h fe , dc current gain 190 210 230 v ce = -1.0 v 125 c 25 c -55 c 0.8 0.7 0.6 0.5 0.9 v be(sat) v ce(sat) v be(on) 0.7 0.65 0.8 0.75 0.9 0.85 i c /i b = 100 i c /i b = 10 voltage (volts) 1.6 1.4 1.2 voltage (volts) i c /i b = 100 i c /i b = 10 1000 ma 100 ma 50 ma 10 ma 01 -jun-2002 rev. a page 2 of 3
any changing of specification will not be informed individual MMBT589 pnp silicon general purpose transistor http://www.secosgmbh.com elektronische bauelemente 0.1 figure 7. safe operating area v ce , collector emitter voltage (volts) 10 i c 0.01 0.1 1.0 10 100 0.1 1.0 figure 8. normalized thermal response t, time (sec) 1.0e+00 1.0e-03 1.0e-02 1e-05 0.01 0.1 1.0 100 1000 1.0e-01 0.0001 0.001 10 r thja , (t) , collector current (amps) 100 s 1 ms 10 ms 100 ms 1 s 2 s single pulse test at t amb = 255 c d = 0.01 0.02 0.05 r(t) 0.2 0.5 01 -jun-2002 rev. a page 3 of 3
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